IEEE

Characterization Methods of TMD Transistor Gate Dielectrics Targeting 1 nm EOT for 2-D CMOS Scaling

Abstract: 2-D materials show promise to possibly replace Si channel material to continue Moore’s Law scaling of transistors down to 5 nm gate lengths. The scaling opportunities of 2-D materials arise ...
Electronic Design

Building Nanodevices Using CMOS Processes

Our world has been changed by microelectromechanical-systems (MEMS) devices such as sensors — they’re smaller, more efficient, and usually more accurate than their legacy predecessors. MEMS technology ...
TMCnet

Mind the Marketing Gap: Most CMOs Say AI Is Transforming Marketing, But Few Are Using It to Transform Their Own Function

Survey Reveals That 96% of Chief Marketing Officers Say AI Is Driving an End-to-End Transformation of Their Function But 42% Are Only Using GenAI to Assist Humans with Individual Tasks AI Investments ...
IEEE

A Wideband Inductorless Programmable Gain Amplifier Using 90-nm CMOS for High-Speed Communication

Abstract: This paper presents a wideband inductorless programmable gain amplifier (PGA) for high-speed communication. The proposed circuit employs a Cherry-Hooper amplifier structure as the gain cell ...