IEEE

3.2-MP Back-Illuminated Polarization Image Sensor With Four-Directional Air-Gap Wire Grid and 2.5-

Abstract: A 3.2-MP four-directional polarization image sensor with air-gap wire-grid polarizer is described. The image sensor was fabricated using a wafer process and incorporates back-illumination ...
C&EN

Room-Temperature Dissociation of 1,2-Dibromodisilenes to Bromosilylenes

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IEEE

A 2.2μm 2-Layer Stacked HDR Voltage Domain Global Shutter CMOS Image Sensor with Dual Conversion Gain and 1.2e- FPN

Abstract: The world’s smallest HDR voltage-domain global shutter (VDGS) image sensor with 2.2μm pixel pitch was fabricated based on a 2-layer stacking process with Cu-to-Cu wafer bonding process. The ...