The 800-mW NESG250134 and 1W NESG260234 medium-power SiGe (silicon-germanium) HBT (heterojunction-bipolar-transistor) amplifiers suit use in two-way radio applications, such as FRS (Family Radio ...

Liam Devlin and Andy Dearn describe the design of a 25W X-band gallium nitride (GaN) power amplifier. Gallium nitride (GaN) technology is very well suited to the realisation of solid-state microwave ...

Just as the common emitter amplifier and common base amplifier each tied those respective transistor terminals to a fixed potential and used the other two terminals as amplifier input and output, so ...

If you cultivate an interest in building radios it’s likely that you’ll at some point make a simple receiver. Perhaps a regenerative receiver, or maybe a direct conversion design, it’ll take a couple ...

1. Is Amplifier Weight an Indicator of Robust Amplifier Design? You have to find out if the amplifier is a Class A/B analog amp or a Class D digital amplifier before you can generalize about weight ...