(Left) Atomic force microscope image of diamond epilayer surface morphology. (Middle) Optical microscope image of the diamond MOSFET. (Right) Performance of the MOSFET measured at 300°C. The drain ...
The automotive sector is seeing a surge in the number of electronic components required, driven by demand for enhanced safety and convenience. At the same time, there’s a pressing need for improved ...
MALVERN, PA. Vishay Intertechnology Inc. has introduced a new 80-V TrenchFET Gen IV n-channel power MOSFET in the 6.15-mm by 5.15-mm PowerPAK SO-8 single package. Designed to save energy by increasing ...
A research team has developed an n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). The developed n-channel diamond MOSFET provides a key step toward CMOS (complementary ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback