The IXRFD630 is a CMOS high speed, high-current gate driver specifically designed to drive MOSFETs in Class D and E HF RF applications as well as other applications requiring ultrafast rise and fall ...
SYDNEY, AUSTRALIA – AUGUST 20, 2024 – Quantum computing company Diraq announced it has demonstrated consistent and repeatable operation with above 99 percent fidelity of two-qubit gates in the SiMOS ...
Using CMOS Gates to create crystal oscillators is cost-effective and gives the designer more control over the parameters. To view the application note, click on the URL below. Circuit selected for www ...
As the industry advances into the angstrom era, gate-all-around architectures combined with atomic-scale materials ...
AUSTIN, Texas — Intel Corp. last week threw a box-like triple-gate transistor structure into the ring of contenders for ascendancy in the post-planar-CMOS era. While emphasizing that the tri-gate ...
28nm Super Low Power is the low power CMOS offering delivered on a bulk silicon substrate for mobile consumer and digital consumer applications. The 28nm process technology is slated to become the ...