Gallium nitride (GaN) is an emerging technology that promises to displace silicon MOSFETs in the next generation of power transistors. As silicon approaches its performance limits, GaN devices offer ...
This year, several companies are expected to bring 600/650 V Gallium Nitride (GaN) power transistors to market. Almost all will be normally-on (depletion mode) transistors connected in a cascode ...
(Nanowerk News) Researchers at Osaka Metropolitan University are proving that diamonds are so much more than just a girl’s best friend. Their groundbreaking research focuses on gallium nitride (GaN) ...
Sponsored by Texas Instruments: Though they still vie for the largest slice of the power-design pie with LDMOS and SiC MOSFETs, GaN devices offer superior specs that may ultimately make them the ...
EL SEGUNDO, Calif.--(BUSINESS WIRE)--EPC announces the introduction of the EPC7004 radiation-hardened GaN FET. The EPC7004 is a 100 V, 7 mΩ, 160 A Pulsed, rad-hard GaN FET in a small 6.56 mm 2 ...
A 650-V, 60-A enhancement-mode GaN transistor from GaN Systems, the GS-065-060-5-T-A, meets and exceeds automotive reliability standards. The power transistor is not only AEC-Q101-qualifed, but also ...
Communication satellites and flying antenna platforms can contribute to the comprehensive and resilient operation of global mobile networks of the fifth and sixth generation (5G, 6G). However, as ...
MUNICH, Germany--(BUSINESS WIRE)--Panasonic Corporation today announced that it will start mass production of a high-speed gate driver (AN34092B) optimized for driving its GaN power transistor X-GaN ...
STMicroelectronics’ new GaN ICs platform for motion control boosts appliance energy ratings High-efficiency GaN power integrated technology tailored for motor drives in white goods and factory ...
Teledyne e2v HiRel Announces New 100 V High-Speed 20 MHz FET and GaN Transistor Driver Flip Chip Die
Teledyne e2v HiRel announces the new TD99102 UltraCMOS® High-speed FET and GaN transistor driver offering very high switching speed of 20 MHz. The new flip-chip part is ideal for driving Teledyne ...
While 5G applications are proliferating everywhere, the industry continues to face a myriad of challenges implementing the technology. One of them has been the performance limitations of ...
The integration of a 3C-SiC layer between GaN and diamond significantly reduces thermal resistance at the interface and improves heat dissipation, allowing for better performance. Researchers at Osaka ...
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