An advanced gate design could reshape EV and data center power systems.

Researchers at the Indian Institute of Science (IISc) have uncovered fundamental insights into designing gallium nitride (GaN ...

EPC's GaN Technology Strengthens Renesas' Market Presence in High-Volume Consumer and AI Power. Together, EPC and ...

ESPOO, Finland, May 1, 2025 /PRNewswire/ -- Beneq announces that its Transform ALD cluster tool has been qualified for volume production of GaN-based power devices on 8'' GaN-on-Si wafers by a Tier 1 ...

International Rectifier Corp. has successfully developed a GaN-based (gallium-nitride) power-device technology platform. It’s expected to provide improvements in two key application-specific figures ...

Efficient Power Conversion (EPC) has entered into a strategic agreement with Renesas Electronics that will see the ...

GaN switches promise higher efficiency and higher power density in SMPS. This article discusses the readiness of this technology and its challenges, and provides an outlook on being a replacement for ...

A gate design cuts leakage, raises threshold voltage, and improves stability in GaN power devices, clearing a barrier to wider use in power systems.

The "The Global RF GaN Market 2026-2036" has been added to ResearchAndMarkets.com's offering. The global Radio Frequency Gallium Nitride (RF GaN) market is experiencing robust expansion, driven by the ...

Wide bandgap semiconductors have taken both power electronics and high frequency circuits by storm, replacing so many applications that were previously dominated by silicon-based devices, e.g., LDMOS ...

The collaboration merges ROHM’s device development expertise with TSMC’s advanced GaN-on-silicon technology. Credit: ROHM/Globenewswire. ROHM has entered a strategic partnership with Taiwan ...

DUBLIN--(BUSINESS WIRE)--The "GaN Power Devices - Global Strategic Business Report" has been added to ResearchAndMarkets.com's offering. The global market for GaN Power Devices was estimated at US$346 ...