(Nanowerk News) A material with a high electron mobility is like a highway without traffic. Any electrons that flow into the material experience a commuter’s dream, breezing through without any ...

In a recent paper published in Chem, researchers from Pohang University of Science and Technology have developed conducting two-dimensional polymers with electron mobility comparable to graphene.

High electron mobility transistors (HEMTs) represent a critical evolution in semiconductor technology by harnessing the advantages of wide bandgap materials such as gallium nitride (GaN) to achieve ...

Improving the efficiency of moving electrons through a material will help empower the next generation of technologies. Scientists at MIT improved electron mobility, which measures how quickly ...

Graphene, a single sheet of carbon atoms arranged in a honeycomb lattice, is known for its exceptional strength, flexibility and conductivity. However, despite holding the world record for ...

Here is why gallium nitride (GaN) is the natural successor to silicon MOSFETs in the 100–650 V class of power devices.

The wish list of device properties that designers of power management systems would like to have is lengthy, but no single material is yet sufficient for the full range of power control applications.

High electron mobility transistors (HEMTs) have emerged as pivotal devices in the field of electronic sensing owing to their intrinsic ability to support a high-mobility two‐dimensional electron gas.